Supergrid Architecture & Systems
“To make the energy transition a success, electricity grids must have the capacity to integrate renewable energies on a massive scale, via direct current (DC) components. SuperGrid Institute provides expertise to develop the technologies and associated analytical methods needed to guarantee the smooth operation of interconnected AC and DC networks.“
Jean-Baptiste HEYBERGER, Department Director – Supergrid Architecture & Systems
SuperGrid Institute’s experts work to overcome the technical challenges confronting DC grids. We develop technologies to control and protect the stability of HVDC and MVDC networks, which need to be much more dynamic than AC networks. Defining the requirements for the key components of DC grids or combined AC-DC power systems and designing and simulating the technical performance of these systems are key to our work.
We employ real-time, electromagnetic transient simulations with accurate, built-in models of power converter control systems to demonstrate how a system will perform when a new technology is integrated into the network (for example, a new protection strategy).
Recent publications
Upgraded Control Strategies to Safeguard Resiliency in Hybrid AC-DC Networks: A Focused Overview of the State of the Art
An overview of advanced control strategies that improve stability and resilience in hybrid AC/DC networks with HVDC and multiterminal DC systems.
Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
This study investigates Al Acceptor Ionization in 4H-SiC PiN power diodes using calibrated TCAD simulations. The results show how Al Acceptor Ionization influences forward conduction, reverse recovery performance and temperature-dependent electrical characteristics.
Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
This paper investigates SiC PiN Power Diodes using DLTFS and TCAD simulations to identify performance-limiting electron and hole traps. The results highlight the impact of defect levels on conduction current, carrier trapping and diode performance.
Contact our expert
Jean-Baptiste HEYBERGER, Department Director
