High Voltage Substation Equipment
“In the High Voltage Substation Equipment research department, we respond to the constraints of DC networks whilst respecting the environment.”
Marie-Hélène Luton, Department Director – High Voltage Substation Equipment
We develop substation technologies to respond to the constraints of future DC networks as well as those of current AC networks. This includes using circuit breakers to clear fault currents from meshed DC networks, as well as developing interconnection nodes to transfer energy. Our circuit breaker technologies and protection strategies are designed to reduce the cost of infrastructure and preserve the stability and availability of the network.
Gas-insulated switchgear is essential to networks, yet it is currently highly dependent on sulphur hexafluoride gas (SF6) – at the top of the list of greenhouse gasses – as the insulating medium. We study, model and optimise alternatives for gas-insulated switchgear. In addition, we research and implement new solid and gas insulation systems to provide enhanced electrical performance and resilience whilst maintaining low environmental impact.
To validate performance, we rely on SuperGrid Institute’s dielectric and power test laboratories. The characterisation platform enables us to define insulating material properties.
Our research projects include:
Recent publications
Upgraded Control Strategies to Safeguard Resiliency in Hybrid AC-DC Networks: A Focused Overview of the State of the Art
An overview of advanced control strategies that improve stability and resilience in hybrid AC/DC networks with HVDC and multiterminal DC systems.
Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
This study investigates Al Acceptor Ionization in 4H-SiC PiN power diodes using calibrated TCAD simulations. The results show how Al Acceptor Ionization influences forward conduction, reverse recovery performance and temperature-dependent electrical characteristics.
Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
This paper investigates SiC PiN Power Diodes using DLTFS and TCAD simulations to identify performance-limiting electron and hole traps. The results highlight the impact of defect levels on conduction current, carrier trapping and diode performance.
