Experimental study of an EMI reduction gate-driver technique for turn-off transition of 1.7 kV SiC MOSFET
This paper proposes a novel self-controlled SiC MOSFET gate driver circuit. This new gate driver proposes a dynamic gate-bias modification.
Functional needs and potential technologies, to enable the stepwise development of HVDC multi-terminal grids
The introduction of modular multilevel converters (MMCs) created a new momentum in the field of high voltage direct current (HVDC).
Sharing our power electronics expertise at EPE’21 ECCE Europe!
We are excited to be back at this leading power electronics event for its latest edition and a week of exchanges.
Dc-MMC for the interconnection of HVDC grids with different line topologies
This paper proposes a new Dc-MMC with a control strategy, which allows the converter to interconnect different line topologies.
Electrical and optical partial discharge assessment of dielectric barriers in mineral oil and synthetic ester
In this study, different barriers were tested in mineral oil and synthetic ester liquid.
A Submodule with Integrated Supercapacitors for HVDC-MMC providing Fast Frequency Response
This paper proposes a modular DC-DC converter as an interface between the energy storage element and the SM capacitor.
A Submodule with Integrated Supercapacitors for HVDC-MMC providing Fast Frequency Response
This paper proposes a modular DC-DC converter as an interface between the energy storage element and the SM capacitor.
Model Parameter Extraction Tool for the Analysis Series-Connected SiC-MOSFETs
Generated SiC-MOSFETs models are employed to perform simulation of switches made of two series-connected devices.
Model Parameter Extraction Tool for the Analysis Series-Connected SiC-MOSFETs
Generated SiC-MOSFETs models are employed to perform simulation of switches made of two series-connected devices.
Measuring small differential-mode voltages with high common-mode voltages and fast transients – Application to gate drivers for wide band-gap switches
In power electronics, gate-voltage measurement is used to optimize the design of the gate driver.
