Structural Analysis and Modular Control Law for Modular Multilevel Converter (MMC)

2019-06-14T14:52:58+00:00mai 21st, 2019|Electronique de puissance & convertisseurs, Publications|

This paper proposes an in-depth analysis from the control point of view of dynamic models of a Modular Multilevel Converter (MMC) for high-voltage direct current (HVDC) application. Firstly, a generic method of analysis is presented for a natural arm-level state-space model. Its structural analysis highlights the decoupled nature of the MMC. Secondly, the well-known sum and difference of the upper and lower arm state and control variables is considered to obtain a (S/D) model. This transformation leads to a coupling between state and control variables and to an increase of the system complexity. Using the analysis results of the natural model and the (S/D) model, an original arm-modular control is finally proposed. The simulation results show the effectiveness of the proposed control, which is simpler to design compared to a conventional (S/D) control.

SuperGrid Institute at PCIM Europe 2019

2019-05-20T12:01:43+00:00mai 13th, 2019|Electronique de puissance & convertisseurs, Evenement|

This year, for the first time our presence at PCIM Europe 2019, was noticeable with our stand from 6th to 9th May. At the conference, and as power electronics is at the heart of our innovations, SuperGrid Institute was invited to present during the « Smart Transformers » special session.

Power electronic traction transformers in 25 kV / 50 Hz systems: Optimisation of DC/DC Isolated Converters with 3.3 kV SiC MOSFETs

2019-05-09T09:36:48+00:00mai 9th, 2019|Electronique de puissance & convertisseurs, Publications|

In AC electric trains, power electronic traction transformers (PETT) are multilevel single phase AC/DC converters connected to the AC medium voltage overhead line. For indirect topologies, DC/DC isolated converters are key elements of PETTs. This paper shows a method to design such DC/DC converters, and several variants are considered. Finally, the comparison results, in the case of a 25 kV / 50 Hz power supply and 3.3 kV SiC MOSFETs, show that the variant with a resonant AC link, with only one controlled bridge and a switching frequency lower than the resonant frequency, offers the best efficiency at rated power for a given volume.

Phd Caroline STACKLER « Electronic transformers for railway applications »

2019-04-12T10:43:02+00:00février 25th, 2019|Electronique de puissance & convertisseurs, Phd|

The main objective of this thesis is to develop a methodology to size PETT topologies, in order to compare them.

PhD Quentin MOLIN « High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour »

2018-12-17T11:01:38+00:00décembre 17th, 2018|Electronique de puissance & convertisseurs, Phd|

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

Measurement and Analysis of SiC-MOSFET threshold voltage shift

2018-11-13T09:35:09+00:00octobre 4th, 2018|Conference, Electronique de puissance & convertisseurs|

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

Repetitive short-circuit measurement on SiC MOSFET

2018-11-12T09:51:03+00:00septembre 7th, 2018|Conference, Electronique de puissance & convertisseurs|

Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.

A 100 kW 1.2 kV 20 kHz DC-DC converter prototype based on the Dual Active Bridge topology

2018-11-12T10:08:40+00:00août 24th, 2018|Electronique de puissance & convertisseurs, Publications|

This article presents the design, the fabrication, and the test of an isolated DC-DC converter for renewable energy applications. The converter is based on the Dual Active Bridge topology and uses silicon carbide power semiconductors and a medium frequency transformer. The design process covers hardware ranging from the semiconductor die to the complete power converter. For the control, a rapid prototyping approach was used. The experimental validation of the 100 kW prototype is presented.

A High Current Switching test bench to estimate switching losses for power switches

2018-11-12T10:09:10+00:00juillet 27th, 2018|Electronique de puissance & convertisseurs|

Our High Current Switching test bench is now operational! This one is integrated to the Power switches characterization platform, which can be used to fully characterize power switches.