Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes

2026-10-29T11:05:55+01:00October 29th, 2026|Electronique de puissance & convertisseurs, Publications|

This study investigates Al Acceptor Ionization in 4H-SiC PiN power diodes using calibrated TCAD simulations. The results show how Al Acceptor Ionization influences forward conduction, reverse recovery performance and temperature-dependent electrical characteristics.

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