This article presents the modified Preisach model of hysteresis for a 3-phase medium frequency transformer in a 100 kW dual active bridge converter.
PhD Piotr DWORAKOWSKI “Modelling and analysis of medium frequency transformers for power converters”
The modelling and analysis are essential in the development of the MFT technology which is attracting lots of research and industrial interest.
The proposed gate driver achieves a better trade-off between losses & conducted emissions compared to the classical series-connected passive resistors for SiC MOSFET gate drivers.
We are very proud to see two colleagues from our Power Electronics & Converters Programme being France’s IEEE PES 2020 PhD prize winners!
PhD Florian ERRIGO “Power converters with integrated energy storage systems for high voltage direct current systems”
This thesis focuses on the opportunity to integrate energy storage systems inside a modular multilevel converter with the aim at tackling the challenges of resiliency and reliability of the electricity transmission network.
Measuring small differential-mode voltages with high common-mode voltages and fast transients – Application to gate drivers for wide band-gap switches
In power electronics, gate-voltage measurement is used to optimize the design of the gate driver.
However, for over a century, the benefits of High Voltage Direct Current (HVDC) for long-distance energy transmission are well known.
Insights on the best technological choices to be used for MFTs & shows significant differences in performance between structures.
Experimental validation and comparison of a SiC MOSFET based 100 kW 1.2 kV 20 kHz three-phase dual active bridge converter using two vector groups
The Dual Active Bridge appears as a promising DC-DC converter topology when galvanic isolation and bidirectional power flow are required. Among its advantages, Zero Voltage Switching allows the switching losses to be significantly reduced.
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported.