This Tuesday the 10th of July, Michel MERMET-GUYENNET presented a keynote speech at the 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019) in Toulouse, following the invitation of Bernado COGO from the Antoine de Saint Exupéry Institute of Technology (IRT Saint Exupéry). In his paper, Michel MERMET-GUYENNET presented power electronics technologies for MV and HV grids.
This paper proposes an in-depth analysis from the control point of view of dynamic models of a Modular Multilevel Converter (MMC) for high-voltage direct current (HVDC) application. Firstly, a generic method of analysis is presented for a natural arm-level state-space model. Its structural analysis highlights the decoupled nature of the MMC. Secondly, the well-known sum and difference of the upper and lower arm state and control variables is considered to obtain a (S/D) model. This transformation leads to a coupling between state and control variables and to an increase of the system complexity. Using the analysis results of the natural model and the (S/D) model, an original arm-modular control is finally proposed. The simulation results show the effectiveness of the proposed control, which is simpler to design compared to a conventional (S/D) control.
This week, SuperGrid Institute participated as an official sponsor of the 8th edition of InnoGrid2020+, the innovative power conference co-organized by ENTSO-E and E.DSO.
This year, for the first time our presence at PCIM Europe 2019, was noticeable with our stand from 6th to 9th May. At the conference, and as power electronics is at the heart of our innovations, SuperGrid Institute was invited to present during the « Smart Transformers » special session.
Power electronic traction transformers in 25 kV / 50 Hz systems: Optimisation of DC/DC Isolated Converters with 3.3 kV SiC MOSFETs
In AC electric trains, power electronic traction transformers (PETT) are multilevel single phase AC/DC converters connected to the AC medium voltage overhead line. For indirect topologies, DC/DC isolated converters are key elements of PETTs. This paper shows a method to design such DC/DC converters, and several variants are considered. Finally, the comparison results, in the case of a 25 kV / 50 Hz power supply and 3.3 kV SiC MOSFETs, show that the variant with a resonant AC link, with only one controlled bridge and a switching frequency lower than the resonant frequency, offers the best efficiency at rated power for a given volume.
The main objective of this thesis is to develop a methodology to size PETT topologies, in order to compare them.
This paper presents an overview of the dc–dc power converters dedicated to HVdc proposing a classification based on their structure. Two large families are established: those which provide galvanic isolation, and those which do not. Several subfamilies are also proposed. An overview of the main HVdc applications that can be targeted with each family is also presented, highlighting the main converter requirements for each application case.
This paper presents a methodology to consider the impedance of a grid in power hardware in the loop (PHIL) experiments to validate power converter control in presence of harmonics or resonances in the network impedance. As the phenomena to emulate are in a large frequency range, the skin effect in conductors has to be taken into account. A procedure is developed to model the network.
This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.
PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”
This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.