25 kV-50 Hz railway power supply system emulation for Power-Hardware-in-the-Loop testings

2019-01-08T10:53:47+00:00January 8th, 2019|Power Electronics & Converters, Publications|

This paper presents a methodology to consider the impedance of a grid in power hardware in the loop (PHIL) experiments to validate power converter control in presence of harmonics or resonances in the network impedance. As the phenomena to emulate are in a large frequency range, the skin effect in conductors has to be taken into account. A procedure is developed to model the network.

PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

2018-12-17T16:51:42+00:00December 17th, 2018|Phd, Power Electronics & Converters|

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

Measurement and Analysis of SiC-MOSFET threshold voltage shift

2018-10-04T13:19:11+00:00October 4th, 2018|Conference, Power Electronics & Converters|

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

Repetitive short-circuit measurement on SiC MOSFET

2018-09-07T16:41:28+00:00September 7th, 2018|Conference, Power Electronics & Converters|

Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.

A 100 kW 1.2 kV 20 kHz DC-DC converter prototype based on the Dual Active Bridge topology

2018-08-24T10:22:03+00:00August 24th, 2018|Power Electronics & Converters, Publications|

This article presents the design, the fabrication, and the test of an isolated DC-DC converter for renewable energy applications. The converter is based on the Dual Active Bridge topology and uses silicon carbide power semiconductors and a medium frequency transformer. The design process covers hardware ranging from the semiconductor die to the complete power converter. For the control, a rapid prototyping approach was used. The experimental validation of the 100 kW prototype is presented.

A High Current Switching test bench to estimate switching losses for power switches

2018-08-09T17:43:58+00:00July 27th, 2018|Power Electronics & Converters|

Our High Current Switching test bench is now operational! This one is integrated to the Power switches characterization platform, which can be used to fully characterize power switches.