The main objective of this thesis is to develop a methodology to size PETT topologies, in order to compare them.
This paper presents an overview of the dc–dc power converters dedicated to HVdc proposing a classification based on their structure. Two large families are established: those which provide galvanic isolation, and those which do not. Several subfamilies are also proposed. An overview of the main HVdc applications that can be targeted with each family is also presented, highlighting the main converter requirements for each application case.
This paper presents a methodology to consider the impedance of a grid in power hardware in the loop (PHIL) experiments to validate power converter control in presence of harmonics or resonances in the network impedance. As the phenomena to emulate are in a large frequency range, the skin effect in conductors has to be taken into account. A procedure is developed to model the network.
This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.
PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”
This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.
A robustness study for 1.7 kV SiC MOSFETs is presented in this article. After evaluation of the critical energy required for failure, devices went under repetitive short-circuit conditions.
This article presents the design, the fabrication, and the test of an isolated DC-DC converter for renewable energy applications. The converter is based on the Dual Active Bridge topology and uses silicon carbide power semiconductors and a medium frequency transformer. The design process covers hardware ranging from the semiconductor die to the complete power converter. For the control, a rapid prototyping approach was used. The experimental validation of the 100 kW prototype is presented.