Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes

This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.

B. Asllani, D. Planson and P. Bevilacqua and J.B. Fonder and B. Choucoutou and H. Morel and L.V. Phung

Conference: European Conference on Silicon Carbide and Related Materials (ECSCRM)