Research & Collaboration
What makes us unique?
SuperGrid Institute owes its success to the people who make up our various research departments. Our teams come from diverse backgrounds in industry and academia, and their wealth of experience and skills make the Institute unique. Each individual brings specific expertise to the table.
This melting pot of knowledge offers opportunities for specialists from different fields to collaborate on new and innovative solutions to technical problems.
The Institute also benefits from close collaborative relationships with industry and academic institutions. The complementary strengths of our partners provide insights and innovative approaches to technical challenges. At the same time, we retain total independence in our research. Public-private investments and collaborative projects finance our work.
SuperGrid Institute’s state-of-the-art research facilities, test platforms and laboratories at the Villeurbanne and Grenoble sites are key to the success of our five research departments.


Latest scientific publications
Upgraded Control Strategies to Safeguard Resiliency in Hybrid AC-DC Networks: A Focused Overview of the State of the Art
An overview of advanced control strategies that improve stability and resilience in hybrid AC/DC networks with HVDC and multiterminal DC systems.
Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
This study investigates Al Acceptor Ionization in 4H-SiC PiN power diodes using calibrated TCAD simulations. The results show how Al Acceptor Ionization influences forward conduction, reverse recovery performance and temperature-dependent electrical characteristics.
Performance-limiting electron and hole traps in 4H-SiC PiN power diodes determined by combined DLTFS and TCAD studies
This paper investigates SiC PiN Power Diodes using DLTFS and TCAD simulations to identify performance-limiting electron and hole traps. The results highlight the impact of defect levels on conduction current, carrier trapping and diode performance.





