This week’s highlight: EPE’20 ECCE Europe-Conference
We are very excited to be the Local Organising Committee of EPE'20 ECCE Europe and to have our colleague Abdelkrim Benchaib honoured as the Conference General Chairman.
[ONLINE EVENT] HVDC Technology qualification
SuperGrid Institute is participating in the PROMOTioN project's Breakout Session 2: HVDC Technology Qualification this Friday, the 11th of Septembre, with a focus on WP9: DC grid protection test method & demonstration.
Experimental validation and comparison of a SiC MOSFET based 100 kW 1.2 kV 20 kHz three-phase dual active bridge converter using two vector groups
The Dual Active Bridge appears as a promising DC-DC converter topology when galvanic isolation and bidirectional power flow are required. Among its advantages, Zero Voltage Switching allows the switching losses to be significantly reduced.
AC/DC Dynamic Interactions of MMC-HVDC in Grid-Forming for Wind-Farm Integration in AC Systems
This paper studies the dynamic interactions between the AC grids and the DC system. In this work, we focus on MMC-HVDC links interconnecting offshore wind farms and AC systems.
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported.
How Good are the Design Tools in Power Electronics?
A 100 kW, isolated dc–dc converter was built over the course of one year, starting from a blank page. This paper details the design and manufacturing process.
Impact of DC fault blocking capability on the sizing of the DC-DC Modular Multilevel Converter
This paper analyzes the impact on the converter design of including such characteristic for the DC-DC Modular Multilevel Converter.
Polynomial multi-variable control strategy for Flux Balancing in Dual Active Bridge Converter
A novel model and a multi-variable linear control for power and magnetizing average currents are proposed
Experimental EMI study of a 3-phase 100kW 1200V Dual Active Bridge Converter using SiC MOSFETs
In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers.
Figures-of-Merit and current metric for the comparison of IGCTs and IGBTs in Modular Multilevel Converters
Simulation results of a MMC model and figures of merit are shown to provide consistent result, proving that the proposed figures of merit are a very simple and fast way to select the best semiconductor switch.
