In accordance with their interesting properties, ionic liquids (ILs) have attracted in the recent years a great interest in the material field. Recently, few authors have demonstrated the reactivity of ionic liquids towards epoxy in order to form new epoxy-based networks...
In accordance with their interesting properties, ionic liquids (ILs) have attracted in the recent years a great interest in the material field. Recently, few authors have demonstrated the reactivity of ionic liquids towards epoxy in order to form new epoxy-based networks...
This presentation will provide an update on our current project: designing a cooler for a high power (5 MW) MVDC converter for offshore wind turbines applications. A number of constraints are imposed, mainly related to a limited volume, environmental, safety and health regulations, and of course cooling performance. Indeed, as we presented last year (ATW 2017), the silicon carbide power semiconductors used in this converter should operate at a junction temperature lower than 100 °C for better efficiency.
Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.
Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
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