Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
As part of PROMOTioN, Super Grid Institute (France) investigates the performance of different environmentally friendly insulating gases
This paper reviews a few of the major control solutions for AC grid forming and operation of DR-HVDC based OWFs. Then these solutions are compared based on their approach in solving the major challenges involved.
This paper reviews a few of the major control solutions for AC grid forming and operation of DR-HVDC based OWFs. Then these solutions are compared based on their approach in solving the major challenges involved.
This thesis aimed to characterize partial discharges in DC gas-insulated substations, and to develop an automatic defect identification tool. The first step of this work was the development of a partial discharge measuring bench. The complete study has been performed in a GIS section, so that the results can be directly applied to industrial equipment.
In this paper, a thorough analysis of the converter arm behavior is presented, which gives an analytic expression of the lower limit of the energy as a function of the converter operating point and the connected grid conditions. The relation between the lower energy limit and the operating power is analyzed by using the practical MMC specifications of an HVDC application. An experimental test of a small-scale MMC mock-up demonstrates the validity of the theoretical analysis.
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
Accurate cable modeling is a recurrent issue for electric architecture evaluation and design, especially in specific contexts, like offshore wind farms. This paper proposes optimal analytical cable models for the technical and economic assessment of offshore wind generation systems.
Accurate cable modeling is a recurrent issue for electric architecture evaluation and design, especially in specific contexts, like offshore wind farms. This paper proposes optimal analytical cable models for the technical and economic assessment of offshore wind generation systems.
S’inscrire à notre newsletter :
Rejoignez-nous
Dans notre newsletter trimestrielle, nous partageons des informations sur nos derniers projets, produits et services et indiquons les prochains événements où vous pouvez nous trouver.
You cannot copy content of this page
