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Measurement and Analysis of SiC-MOSFET threshold voltage shift

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

October 4th, 2018|Conference, Power Electronics & Converters|

Measurement and Analysis of SiC-MOSFET threshold voltage shift

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

PhD Etienne OUSS “Characterization of Partial Discharges and Defect Identification in High-Voltage Direct Current GIS”

This thesis aimed to characterize partial discharges in DC gas-insulated substations, and to develop an automatic defect identification tool. The first step of this work was the development of a partial discharge measuring bench. The complete study has been performed in a GIS section, so that the results can be directly applied to industrial equipment.

September 25th, 2018|All, High Voltage Substation Equipment, Phd|

PhD Etienne OUSS “Characterization of Partial Discharges and Defect Identification in High-Voltage Direct Current GIS”

This thesis aimed to characterize partial discharges in DC gas-insulated substations, and to develop an automatic defect identification tool. The first step of this work was the development of a partial discharge measuring bench. The complete study has been performed in a GIS section, so that the results can be directly applied to industrial equipment.

September 25th, 2018|Appareillage électrique haute tension, Phd, Tout|
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