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Measurement and Analysis of SiC-MOSFET threshold voltage shift
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
SuperGrid Institute investigates the performance of different environmentally friendly insulating gases
As part of PROMOTioN, Super Grid Institute (France) investigates the performance of different environmentally friendly insulating gases
SuperGrid Institute investigates the performance of different environmentally friendly insulating gases
As part of PROMOTioN, Super Grid Institute (France) investigates the performance of different environmentally friendly insulating gases
AC Grid Forming by Coordinated Control of Offshore Wind Farm connected to Diode Rectifier based HVDC Link-Review and Assessment of Solutions
This paper reviews a few of the major control solutions for AC grid forming and operation of DR-HVDC based OWFs. Then these solutions are compared based on their approach in solving the major challenges involved.
PhD Etienne OUSS “Characterization of Partial Discharges and Defect Identification in High-Voltage Direct Current GIS”
This thesis aimed to characterize partial discharges in DC gas-insulated substations, and to develop an automatic defect identification tool. The first step of this work was the development of a partial discharge measuring bench. The complete study has been performed in a GIS section, so that the results can be directly applied to industrial equipment.
PhD Etienne OUSS “Characterization of Partial Discharges and Defect Identification in High-Voltage Direct Current GIS”
This thesis aimed to characterize partial discharges in DC gas-insulated substations, and to develop an automatic defect identification tool. The first step of this work was the development of a partial discharge measuring bench. The complete study has been performed in a GIS section, so that the results can be directly applied to industrial equipment.
Repetitive short-circuit measurement on SiC MOSFET
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
Repetitive short-circuit measurement on SiC MOSFET
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
Models of AC and DC cable systems for technical and economic evaluation of offshore wind farm connection
Accurate cable modeling is a recurrent issue for electric architecture evaluation and design, especially in specific contexts, like offshore wind farms. This paper proposes optimal analytical cable models for the technical and economic assessment of offshore wind generation systems.
Space Charge Measurements for HVDC GIS Spacer using the Thermal Step Method
High voltage direct current (HVDC) technologies are currently emerging to develop new energy transmission networks able to integrate renewable energy sources with remote locations from consumers. Gas Insulated Substations (GIS) have been widely used in alternating current (AC) transmission due to their low footprint and high reliability.
