Repetitive short-circuit measurement on SiC MOSFET
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions. Because the power switches experienced very stressful mode, the monitoring of key parameters is required to understand failures which in all occurrence are related to the gate oxide weakness. The strong impact of drain to source bias voltage on the critical energy during short-circuit mode is also investigated. Additionally, test bench and protocols are detailed.
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Presented at ECSCRM2018
Q. Molin (1,a*), M. Kanoun (2,b), C. Raynaud (3,c), H. Morel (3,d)
(1) Supergrid Institute, 21 rue Cyprian, Villeurbanne 69611 CEDEX, France
(2) EDF R&D, Moret-sur-Loing 77818, France
(3) Univ Lyon, INSA Lyon, CNRS, Ampere, F-69621, France