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HVDC protection criteria for transient stability of AC systems with embedded HVDC links

The objective of this study is to propose a methodology for the transient stability assessment of a simple but representative AC grid in case of DC fault. After validation of the methodology, some HVDC link protection criteria are defined in terms of the Critical Time to Return to Operation. These criteria will be helpful for the design of HVDC protection systems or for the sizing of future HVDC links in order to respect the constraints of the existing protection strategies.

October 15th, 2018|Publications, Supergrid Architecture & Systems|

Measurement and Analysis of SiC-MOSFET threshold voltage shift

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

October 4th, 2018|Conference, Power Electronics & Converters|

Measurement and Analysis of SiC-MOSFET threshold voltage shift

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

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