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25 kV-50 Hz railway power supply system emulation for Power-Hardware-in-the-Loop testings

This paper presents a methodology to consider the impedance of a grid in power hardware in the loop (PHIL) experiments to validate power converter control in presence of harmonics or resonances in the network impedance. As the phenomena to emulate are in a large frequency range, the skin effect in conductors has to be taken into account. A procedure is developed to model the network.

January 8th, 2019|Power Electronics & Converters, Publications|

Modelling of a 25 kV-50 Hz railway infrastructure for harmonic analysis

This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.

December 20th, 2018|Power Electronics & Converters, Publications|

PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

December 17th, 2018|Phd, Power Electronics & Converters|

PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

December 17th, 2018|Electronique de puissance & convertisseurs, Phd|

SuperGrid Institute’s project selected for Grid2030

SuperGrid Institute and IMDEA joint forces with the support of REE, and created a consortium. This consortium was selected from more than 80 projects. Through the "Reduced Inertia Transient Stability Enhancement" (RITSE) project, SuperGrid Institute will strive to improve the transient stability of the AC networks by coordinating the use of batteries and HVDC links.

December 6th, 2018|Architecture & systèmes du supergrid, Evenement|

SuperGrid Institute’s project selected for Grid2030

SuperGrid Institute and IMDEA joint forces with the support of REE, and created a consortium. This consortium was selected from more than 80 projects. Through the "Reduced Inertia Transient Stability Enhancement" (RITSE) project, SuperGrid Institute will strive to improve the transient stability of the AC networks by coordinating the use of batteries and HVDC links.

December 6th, 2018|Event, Supergrid Architecture & Systems|
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