Modelling of a 25 kV-50 Hz railway infrastructure for harmonic analysis

2019-02-18T11:42:11+01:00December 20th, 2018|Power Electronics & Converters, Publications|

This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.

Modelling of a 25 kV-50 Hz railway infrastructure for harmonic analysis

2021-08-11T16:56:29+02:00December 20th, 2018|Electronique de puissance & convertisseurs, Publications|

This paper presents a methodology for the modelling of a 25 kV-50 Hz railway infrastructure, for frequencies from 0 to 5 kHz. It aims to quantify the amplifications of current and voltage harmonics generated by on-board converters into the infrastructure. A circuit is developed to model the skin effect in the overhead line for time-domain simulations. A new approach, based on state space representation and transfer functions, is also proposed to analyse the interactions between trains.

PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

2018-12-17T16:51:42+01:00December 17th, 2018|Phd, Power Electronics & Converters|

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

2021-08-11T17:42:45+02:00December 17th, 2018|Electronique de puissance & convertisseurs, Phd|

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

SuperGrid Institute’s project selected for Grid2030

2021-08-11T16:30:13+02:00December 6th, 2018|Architecture & systèmes du supergrid, Evenement|

SuperGrid Institute and IMDEA joint forces with the support of REE, and created a consortium. This consortium was selected from more than 80 projects. Through the "Reduced Inertia Transient Stability Enhancement" (RITSE) project, SuperGrid Institute will strive to improve the transient stability of the AC networks by coordinating the use of batteries and HVDC links.

SuperGrid Institute’s project selected for Grid2030

2020-03-19T16:09:00+01:00December 6th, 2018|Event, Supergrid Architecture & Systems|

SuperGrid Institute and IMDEA joint forces with the support of REE, and created a consortium. This consortium was selected from more than 80 projects. Through the "Reduced Inertia Transient Stability Enhancement" (RITSE) project, SuperGrid Institute will strive to improve the transient stability of the AC networks by coordinating the use of batteries and HVDC links.

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