State of the art of gate-drive power supply for medium and high voltage applications
Gate-drive power supplies in medium voltage and high voltage direct current (MVDC / HVDC) applications require medium to high voltage insulation.
Protruding Ceramic Substrates for High-Voltage Packaging of Wide-Bandgap Semiconductors
With the development of wide bandgap semiconductors, voltage ratings of 10kV and more become realistic. As a consequence, it is now mandatory to propose a suitable packaging. Ceramic-metal substrates are an established technology for voltages up to 3.3kV, but they exhibit some weaknesses for higher voltages.
SiC power devices packaging with a short-circuit failure mode capability
The failure mode of press-pack-type packages dedicated to SiC devices is experimentally analyzed in order to investigate their use for HVDC applications. Single SiC Schottky diode samples have been submitted to short-circuit conditions and continuous current flow test.
Hysteresis modelling of a medium frequency single-phase transformer
The article describes a feedback Preisach hysteresis model equivalent circuit implementation of a medium frequency single-phase transformer being a part of a high power and high efficiency DC-DC converter.
APEC 2017 “Robustness of SiC MOSFET under Avalanche Conditions”
This paper presents the experimental evaluation of SiC MOSFETs from different manufacturers operated in avalanche.
PhD Ilyas DCHAR “Design of a “fail-to-short” power module for HVDC applications”
High Voltage Direct Current (HVDC) converters are composed of hundreds of semiconductor switches connected in series to sustain the rated voltage of the converter (several hundred of kilovolts). Because of the large number of switches, it is highly probable that at least one of them will fail during the lifetime of the converter. Such failure should not cause the entire converter to shut down, despite the series connexion of the switches. As a consequence, each switch should be designed so that upon failure, it becomes a short circuit and keeps carrying the current (“fail-to-short” behaviour).
PhD Ilyas DCHAR “Design of a “fail-to-short” power module for HVDC applications”
High Voltage Direct Current (HVDC) converters are composed of hundreds of semiconductor switches connected in series to sustain the rated voltage of the converter (several hundred of kilovolts). Because of the large number of switches, it is highly probable that at least one of them will fail during the lifetime of the converter. Such failure should not cause the entire converter to shut down, despite the series connexion of the switches. As a consequence, each switch should be designed so that upon failure, it becomes a short circuit and keeps carrying the current (“fail-to-short” behaviour).
PhD Albert PEREIRA “Design methodology of a medium frequency transformer for high voltage and high power DC-DC converters”
The transmission and distribution of electric power is normally made by ac networks (50 Hz or 60 Hz), where one of the key elements of this infrastructure is the power transformer; used for more than a century, its design is very well understood, with a level of operating efficiency normally greater than 99%.
DC-DC Converters for HVDC Grids: A Survey
The recent interest in renewable energies has encouraged the research on a new concept of electrical grid - the Supergrid based on HVDC meshed grids. To be implemented, this new system requires the development of new technologies. One key-enabling technology is the high power DC-DC converter, a topic that is increasingly gaining more attention from both academia and industry.
A Preliminary Loss Comparison of Solid-State Transformers in a Rail Application Employing Silicon Carbide (SiC) MOSFET Switches
The silicon carbide (SiC) power semiconductor and the medium frequency transformer (MFT) are two enabling technologies that are allowing the efficiencies and power densities of power electronic converters to be pushed beyond the limits of those that have previously been possible...
