Experimental EMI study of a 3-phase 100kW 1200V Dual Active Bridge Converter using SiC MOSFETs
In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers.
In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers.
Simulation results of a MMC model and figures of merit are shown to provide consistent result, proving that the proposed figures of merit are a very simple and fast way to select the best semiconductor switch.
This paper introduces a unidirectional MVDC-HVDC converter for ‘all DC’ connected offshore wind farms.
This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration.
The experimental studies show the effects of the transformer construction and vector group (star/delta) on the common-mode currents through the gate drivers of SiC MOSFETs in a 100kW 1.2kV three-phase dual active bridge converter.
In this paper, a methodology is proposed to define the optimal rated power and number of PEBBs.
This article presents the measurements of the equivalent B(H) and the equivalent magnetic permeability of two three-phase MFT prototypes.
The work of this thesis focuses on the experimental development of a passive and biphasic cooling system to cool down power electronics. Some of those modules are mean voltage power converters developed by Supergrid Institute. Some constraints have been imposed upstream to this project. While some limitations are of the technological nature, other constraints are related mainly to the environmental and biological aspects. The first part of this thesis was to find a suitable cooling system that could be adapted to the project specifications. After some research, we decided to build a loop thermosiphon filled with NOVEC 649.
SuperGrid Institute has achieved a major milestone in the development of 10 kV Silicon Carbide (SiC) devices such as 5A BJT and 50A PIN diode as part of its work on developing innovative solutions for MV converters. Recent tests revealed outstanding switching performances.
SuperGrid Institute wishes you an electric new year! [...]