SiC 10kV Pin diode and BJT

Parallel RLC Resonator Circuit

Description

Several batches of Bipolar Junction Transistor have been designed and manufactured. The current development allowed to reach a
average voltage breakdown of 4.5 kV with an average current capabilities of some Amps. These components have been characterized with static and dynamic conditions. SuperGrid Institute proposes the studies and testing reports. Some deices can also be provided for technical assessment.

TRL SCALE

Preliminary tests.

Advantages

  • Increased robustness
  • Suitable for pulsed applications

Applications

  • MV converters
  • Pulsed applications

Deliverables

  • Testing report
  • Prototypes
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