SiC 10kV Pin diode and BJT

Package “Pin diodes”

Description

For SiC PiN Diodes, three runs have been designed and manufactured. Due to the iterative process required for the manufacturing of the devices, each run present different performances in terms of voltage rating. The devices issued from the second run present the best breakdown voltage capabilities with an average value of 7 kV.

TRL SCALE

Preliminary tests.

Advantages

  • Increased robustness
  • Suitable for pulsed applications

Applications

  • MV converters
  • Pulsed applications

Deliverables

  • Testing report
  • Prototypes
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