In this prototype, achieving full operation was prevented by false triggering of semiconductors due to large common-mode current through gate drivers.
Figures-of-Merit and current metric for the comparison of IGCTs and IGBTs in Modular Multilevel Converters
Simulation results of a MMC model and figures of merit are shown to provide consistent result, proving that the proposed figures of merit are a very simple and fast way to select the best semiconductor switch.
Partial discharge measurement is considered as one of the most powerful monitoring and diagnostic tools for the detection and recognition of defects for high voltage equipment.
This paper proposes a set of measurable Key Performance Indicators (KPI) that demonstrates how effective a protection strategy is achieving key objectives.
This paper addresses the problem of fault identification in meshed HVDC grids once an abnormal behavior has been detected.
Experimental study of the self-disturbance phenomena in a halfbridge configuration of Si IGBT and SiC MOSFET switches
This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration.
The experimental studies show the effects of the transformer construction and vector group (star/delta) on the common-mode currents through the gate drivers of SiC MOSFETs in a 100kW 1.2kV three-phase dual active bridge converter.