Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
This paper reports the design, the processing, the static characterisation, the switching behaviour and the high current stress test of 10 kV aimed 4H-SiC bipolar diodes. The actual breakdown voltage of the selected devices is between 7 kV and 8 kV. The switching characterisations show a good behaviour with a t rr of only 90 ns. No degradation was observed after the application of 10 000 high current pulses during the stress tests.
A robustness study for 1.7 kV SiC MOSFETs is presented in this article. After evaluation of the critical energy required for failure, devices went under repetitive short-circuit conditions.
This article presents the design, the fabrication, and the test of an isolated DC-DC converter for renewable energy applications. The converter is based on the Dual Active Bridge topology and uses silicon carbide power semiconductors and a medium frequency transformer. The design process covers hardware ranging from the semiconductor die to the complete power converter. For the control, a rapid prototyping approach was used. The experimental validation of the 100 kW prototype is presented.
This paper presents a methodology to optimize the sizing of such power converters in order to compare different topologies for a given application. The proposed procedure maximises the efficiency of the converter under a limited volume.
Our High Current Switching test bench is now operational! This one is integrated to the Power switches characterization platform, which can be used to fully characterize power switches.
Semi-Analytical Methods for Calculation of Leakage Inductance and Frequency-Dependent Resistance of Windings in Transformers
This paper focuses on analytical or semi-analytical calculation techniques to be integrated into a medium frequency transformer optimization process.
Theoretical and experimental analysis of the soft switching process for SiC MOSFETs based Dual Active Bridge converters
In the new electrical grids, series/parallel converters architectures can be considered for medium and high voltage power conversion. Dual Active Bridge (DAB) topology is a serious candidate to be implemented within these converters.
This paper presents an overview of the DC-DC power converters dedicated to HVDC proposing a classification based on their structure.
This poster describes the DC-DC converter technology intended for Medium Voltage Direct Current grids. The benefits of the proposed technology are highlighted for the DC collector for offshore wind farms.