Several members of our teams will be on live this Friday, 4th September, to participate to a Q&A session as part of the PROMOTioN project.
We are excited to have 3 papers selected this year at the CIGRE e-session!
SuperGrid Institute’s vision at the second conference on Power Transmission in Africa (Johannesburg)
This morning, SuperGrid Institute presented at the second conference on Power Transmission in Africa (Johannesburg) its vision on new transmission technologies and architecture, shaping the future grids. With emphasis on the fantastic opportunity that the latest HVDC technologies and solutions represent for a robust and interconnected power system in Africa, able to address major issues linked to energy transition.
This Tuesday the 4th of February, at the European Commission’s Directorate General for Energy, Bruno Luscan, CTO of SuperGrid Institute, presented the company’s vision on the importance of the role of HVDC links within AC/DC networks.
The EPE flag handover at EPE’19, Genova: SuperGrid Institute takes the reins for EPE 2020 ECCE Europe in Lyon, France
At the closing session, Abdelkrim Benchaib, General Chairman of EPE’20, received the EPE flag, on stage, from Mario Marchesoni, General Chairman of EPE’19, in the presence of Leo Lorenz, President of the EPE association. During this conference, Abdelkrim Benchaib was also elected as a member of the executive committee of EPE ECCE Europe for 4 more years.
This Tuesday the 10th of July, Michel MERMET-GUYENNET presented a keynote speech at the 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019) in Toulouse, following the invitation of Bernado COGO from the Antoine de Saint Exupéry Institute of Technology (IRT Saint Exupéry). In his paper, Michel MERMET-GUYENNET presented power electronics technologies for MV and HV grids.
The Energy Management Control of MMC by SuperGrid Institute was presented in Japan this week at the CIGRE-IEC 2019 Conference on EHV and UHV (AC & DC), generating stimulating discussions about this new technology.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.
Robustness study for the 1.7 kV SiC MOSFET is presented. After evaluation of the critical energy required for failure, devices were submitted to repetitive short-circuits conditions.
From 27 to 31 August, SuperGrid Institute participate at the CIGRE Technical Exhibition 2018: the leading Power Systems Event. Posters, workshops, sessions… you will meet many of our SuperGrid Institute experts, and of course at our stand n°243, available to network and discuss.