This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration.
The experimental studies show the effects of the transformer construction and vector group (star/delta) on the common-mode currents through the gate drivers of SiC MOSFETs in a 100kW 1.2kV three-phase dual active bridge converter.
In this paper, a methodology is proposed to define the optimal rated power and number of PEBBs.
We are very proud to be listed in the INPI's top 10 patent applicants in the SME category in France for the 2nd year running!
We are very excited to be able to share our first ever annual report with you!
The International Smart Grid Action Network (ISGAN) has recently published its discussion paper “micro vs MEGA: trends influencing the development of the power system”, with the contribution of SuperGrid Institute experts.
On the 29th of April, SuperGrid Institute and the 7 other French ITEs officially joined the French Institutes of Technology association alongside its 8 existing members, the IRTs, to develop tangible innovations for the world of tomorrow.
With the FastGrid project completion date just a few months away, find out more about the ins and outs of the project in this video filmed at our premises.
Using Gibbs free energy method, a theoretical study has been conducted on SF6 replacement candidates listed above.
This article presents the measurements of the equivalent B(H) and the equivalent magnetic permeability of two three-phase MFT prototypes.
