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PhD Quentin MOLIN “High Voltage SiC MOSFET Robustness study: threshold voltage shift and short-circuit behaviour”

2018-12-17T16:51:42+00:00December 17th, 2018|Phd, Power Electronics & Converters|

This manuscript is a contribution to reliability and robustness study of MOSFET components on silicon carbide “SiC”, wide band gap semiconductor with better characteristics compared to silicon “Si” material. Those new power switches can provide better switching frequencies or voltage withstanding for example in power converter. SiC MOSFET are the results of approximately 10 years of research and development and can provide increased performances and weight to some converter topology for high voltage direct current networks.

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SuperGrid Institute’s project selected for Grid2030

2018-12-06T17:47:18+00:00December 6th, 2018|Event, Supergrid Architecture & Systems|

SuperGrid Institute and IMDEA joint forces with the support of REE, and created a consortium. This consortium was selected from more than 80 projects. Through the "Reduced Inertia Transient Stability Enhancement" (RITSE) project, SuperGrid Institute will strive to improve the transient stability of the AC networks by coordinating the use of batteries and HVDC links.

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PhD Miguel ROMERO RODRIGUEZ “Supervisory control synthesis for MMC-based HVDC systems”

2018-11-09T13:52:00+00:00November 9th, 2018|Phd, Supergrid Architecture & Systems|

This work proposes a method for the full development, from conception to implementation, of the supervisory control of a multi-terminal HVDC (MT-HVDC) system.

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Study of Turn-to-Turn Electrical Breakdown for Superconducting Fault Current Limiter Applications

2018-11-06T16:01:51+00:00November 2nd, 2018|High Voltage Substation Equipment, Publications|

The rational insulation design of a resistive superconducting fault current limiter (r-SCFCL) requires data gathered from experimental setups representative of the final apparatus. Therefore, an experimental study was performed to characterize the electrical breakdown (BD) of liquid nitrogen (LN2) in the peculiar conditions of a quenching superconducting device.

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Arc appearance and cathode spot distribution in a long gap high-current vacuum arc controlled by an external axial magnetic field

2018-11-15T16:33:23+00:00October 31st, 2018|High Voltage Substation Equipment, Publications|

An experimental study of a high-current vacuum arc (VA) generated between two static CuCr25 contacts spaced 20 or 30 mm apart was conducted to characterize the arc appearance and the cathode spot (CS) distribution.

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Bruno Luscan’s keynote presentation at EPE’18 ECCE EUROPE is now available online

2018-10-22T17:43:48+00:00October 22nd, 2018|Event|

“POWER GRIDS CONTROL: DRIVERS AND TRENDS” by Bruno Luscan, SuperGrid Institute’s keynote presentation at EPE'18 ECCE EUROPE is now available online!

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Electrical properties of epoxy systems based on ionic liquids

2018-11-07T16:13:21+00:00October 12th, 2018|High Voltage Substation Equipment, Publications|

In accordance with their interesting properties, ionic liquids (ILs) have attracted in the recent years a great interest in the material field. Recently, few authors have demonstrated the reactivity of ionic liquids towards epoxy in order to form new epoxy-based networks...

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CIGRE Young Members organizing a visit at SuperGrid Institute

2018-10-08T14:28:39+00:00October 8th, 2018|Event|

Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.

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Measurement and Analysis of SiC-MOSFET threshold voltage shift

2018-10-04T13:19:11+00:00October 4th, 2018|Conference, Power Electronics & Converters|

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.

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