“POWER GRIDS CONTROL: DRIVERS AND TRENDS” by Bruno Luscan, SuperGrid Institute’s keynote presentation at EPE'18 ECCE EUROPE is now available online!
An exciting week at SuperGrid Institute with the Fête de la Science 2018! After the open house visits on Saturday the 6th of October, we welcomed students from three high school classes over the following week.
Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.
Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.