Arc appearance and cathode spot distribution in a long gap high-current vacuum arc controlled by an external axial magnetic field

2018-11-15T16:33:23+00:00October 31st, 2018|High Voltage Substation Equipment, Publications|

An experimental study of a high-current vacuum arc (VA) generated between two static CuCr25 contacts spaced 20 or 30 mm apart was conducted to characterize the arc appearance and the cathode spot (CS) distribution.

Bruno Luscan’s keynote presentation at EPE’18 ECCE EUROPE is now available online

2018-10-22T17:43:48+00:00October 22nd, 2018|Event|

“POWER GRIDS CONTROL: DRIVERS AND TRENDS” by Bruno Luscan, SuperGrid Institute’s keynote presentation at EPE'18 ECCE EUROPE is now available online!

Electrical properties of epoxy systems based on ionic liquids

2018-11-07T16:13:21+00:00October 12th, 2018|High Voltage Substation Equipment, Publications|

In accordance with their interesting properties, ionic liquids (ILs) have attracted in the recent years a great interest in the material field. Recently, few authors have demonstrated the reactivity of ionic liquids towards epoxy in order to form new epoxy-based networks...

CIGRE Young Members organizing a visit at SuperGrid Institute

2018-10-08T14:28:39+00:00October 8th, 2018|Event|

Once a year, CIGRE young members France, organizes industrial, onsite visits where academics, engineers and experts can share and discuss with scholars. This year, SuperGrid Institute has accepted to host this meeting on our premises on the 18th of October 2018.

Measurement and Analysis of SiC-MOSFET threshold voltage shift

2018-10-04T13:19:11+00:00October 4th, 2018|Conference, Power Electronics & Converters|

Gate-oxide technology weakness is a main reliability issue of Silicon Carbide MOSFET transistors. The threshold voltage shift is a critical phenomenon that addresses the reliability of industrial power applications. It is important to have a better understanding of the phenomena implied in the gate threshold voltage shift. In this context, HTGB test is proposed and the resulting gate oxide stress is studied and discussed in this paper.