Silicon carbide power MOSFETs are used in numerous studies to improve the efficiency or the performance of power electronic converters. However, the gate-oxide technology weakness is a main reliability issue of silicon carbide MOSFET transistors.
This paper presents the design of a power electronics converter to produce strong current pulses (about 400A) in the core of a HVDC cable in order to use the thermal step method to evaluate the ageing state of the dielectric component. The described converter uses a magnetic coupler with intercells transformers and is current controlled. Index Terms—magnetic coupler; intercell transformer; high current pulses; thermal step method; dielectrics.
In this work, a 2D Finite Element Method (FEM) is used to calculate the frequency dependent impedance and admittance matrices of underground and submarine cables. A harmonic magnetodynamic formulation is used to calculate the series impedances, and for the calculation of the parallel admittance an electrodynamic formulation is applied.
Optimal Supercapacitor Pack Sizing for Modular Multilevel Converter with Integrated Energy Storage System
In the new electrical grids, series/parallel converters architectures can be considered for medium and high voltage power conversion. Dual Active Bridge (DAB) topology is a serious candidate to be implemented within these converters.
The threshold voltage instability is a main reliability issue of Silicon Carbide MOSFET transistors. It is a critical parameter when it comes to give a failure in time rate for industrial power applications. In this context, a static ageing test based on JEDEC standard is proposed and the resulting gate oxide degradation is studied and discussed in this paper.
Superconducting fault current limiters (SFCL) are already in operation in alternative current medium voltage applications and their use in HVDC grids is very promising due to their capability of reducing high short-circuit currents.