In this webinar, we will share our technical analysis of HVDC interoperability and present possible directions we can take moving forward.
We are currently analysing the experimental data issue from these power tests in order to write our report for the project.
Our CEO Hubert de la Grandière was interviewed recently by Jean-Marc Sylvestre on the set of Small is Smart! Watch the vidéo here!
Experimental study of the self-disturbance phenomena in a halfbridge configuration of Si IGBT and SiC MOSFET switches
This paper investigates the gate-driver design challenges encountered due to the fast switching of wide band-gap semiconductors (here, SiC MOSFETs) in the half-bridge configuration.
The experimental studies show the effects of the transformer construction and vector group (star/delta) on the common-mode currents through the gate drivers of SiC MOSFETs in a 100kW 1.2kV three-phase dual active bridge converter.
A synergetic effect between hBN and alumina has been observed regarding thermal and electrical properties. A 500% increase in the thermal conductivity could be achieved with a limited impact on viscosity increase.
One of the possible SF6 alternatives that emerged in recent times is a fluoronitrile (FN), NovecTM 4710, based mixture.